| PART |
Description |
Maker |
| PTB20009 |
2.5 Watts, 93560 MHz Cellular Radio RF Power Transistor
2.5 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor 2.5瓦，935-960兆赫蜂窝无线电射频功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
TriQuint Semiconductor, Inc.
|
| DTA113ED |
Dual PNP Bias Resistor Transistors R1 = 1 kΩ, R2 = 1 kΩ
|
ON Semiconductor
|
| AMFW-7S-122128-100P2 AMFW-7S-117128-65B AMFW-5S-12 |
8000 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
3700 MHz - 4200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
9600 MHz - 9800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
11700 MHz - 12750 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
7200 MHz - 7800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
11400 MHz - 12200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| DTA115ED |
Dual PNP Bias Resistor Transistors R1 = 100 kΩ, R2 = 100 kΩ
|
ON Semiconductor
|
| SKY77196 |
Dual-Band PA Module for WCDMA / HSDPA Band II (1850-1910 MHz) and Band V (824-849 MHz)
|
Skyworks Solutions Inc.
|
| PTB20008 |
10 Watts, 93560 MHz Cellular Radio RF Power Transistor
10 Watts, 935-960 MHz Cellular Radio RF Power Transistor
10 Watts 935-960 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| MP04HBT-16 MP04HBN-16 MP04HBP-16 MP04HBP590-18 MP0 |
Dual Thyristor, Thyristor/Diode Module
Dual Thyristor Thyristor/Diode Module
Enclosure NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.5"; External Width:9.8"; External Depth:6.3"; Enclosure Color:Clear 935 A, 1800 V, SCR
Circular Connector; No. of Contacts:3; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:12-3 935 A, 1400 V, SCR
PT 3C 3#16 SKT RECP 935 A, 1800 V, SCR
Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:9.8"; External Width:6.3"; External Depth:4.9"; Enclosure Color:Clear 935 A, 1600 V, SCR
|
DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Dynex Semiconductor, Ltd.
|
| AU-1049-70-1179 AU-1049-70-N-1179 AU-1372-140-N AU |
50 MHz - 90 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
100 MHz - 180 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
30 MHz - 500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
50 MHz - 1000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
MITEQ INC
|
| 2793 |
diplexer with band 1 from 174 to 240 MHz and band 2 from 88 to 180 MHz
|
KR Electronics, Inc.
|
| AM-3A-1015-BNC-1179 AM-2A-0515-BNC-1179 AM-2A-1020 |
1000 MHz - 1500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
500 MHz - 1500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 180 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| MP04HBN590-14 |
935 A, 1400 V, SCR
|
DYNEX SEMICONDUCTOR LTD
|
